2.1 To develop solution-processable, wide band gap, hole-transporting inorganic semiconductors based on Cu(I) and Sn(II) compounds such as CuSeCN, Sn(SCN)2, Na2Sn2O3, and K2Sn2O3 for opto/electronic applications.
2.2 To improve the hole transporting characteristics of CuSCN by investigating its film morphology-property relationship.